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Si1557DH
Vishay Siliconix
N- and P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
N-Channel
P-Channel
V DS (V)
12
- 12
R DS(on) ( Ω )
0.235 at V GS = 4.5 V
0.280 at V GS = 2.5 V
0.340 at V GS = 1.8 V
0.535 at V GS = - 4.5 V
0.880 at V GS = - 2.5 V
1.26 at V GS = - 1.8 V
I D (A)
1.3
1.2
1.0
- 0.86
- 0.67
- 0.56
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs
? Thermally Enhanced SC-70 Package
? Fast Switching to Minimize Gate and Switching
Losses
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Baseband dc-to-dc Converter Switch for Portable
Electronics
SOT-363
SC-70 (6-LEADS)
S 1
1
6
D 1
Marking Code
EC
XX
G 1
2
5
G 2
Lot Traceability
and Date Code
D 2
3
4
S 2
Part # Code
Top View
Ordering Information: Si1557DH-T1-E3 (Lead (Pb)-free)
Si1557DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
12
±8
5s
Steady State
- 12
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
1.3
0.9
3
1.2
0.8
- 0.86
- 0.62
-2
- 0.77
- 0.55
A
Continuous Source Current (Diode Conduction) a
I S
0.5
0.39
- 0.5
- 0.39
Maximum Power Dissipation a
T A = 25 °C
T A = 85 °C
P D
0.6
0.3
0.47
0.25
0.6
0.3
0.47
0.25
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
170
220
105
210
265
125
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71944
S10-1054-Rev. C, 03-May-10
www.vishay.com
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